Tri-Gate 3D Transistors:
Like it’s mentioned earlier, Intel is introducing Tri-Gate 3D transistors for the very first time with Ivy Bridge. These have a three-dimensional fin that stands from the silicon substrate. To begin with, this means low power consumption or same performance for less power consumption as compared to old planar transistors. Another advantage this brings is that now Intel can put in more transistors in less space which will be a big concern as manufacturing process will shrink over the years.
Tri-Gate transistors have almost three times more surface area as compared to planar transistors which means that more electrons can flow when it in ‘on’ state. It also improves the transistor switching performance which increases the computing performance and decrease the power leakage.
Intel claims that the new transistor design will provide around 37% more performance at low voltage which can play a big part in the battery timings of the upcoming Ivy Bridge based ultrabooks.
Manufcaturing of the Tri-Gate transistors isn’t expansive either, they only cost around 3-5% more as compared to old planar transistors which means that we wouldn’t see any considerable price increments with Ivy Bridge.
This video by a senior fellow of Intel explains Tri-Gate transistors pretty nicely: